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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB994 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) *Collector Power Dissipation: PC= 30W@ TC= 25 *Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max)@ IC= -3A *Complement to Type 2SD1354 APPLICATIONS *Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage w ww scs .i VALUE -60 V -60 -7 -3 -0.5 1.5 W 30 150 -55~150 V V A A UNIT .cn mi e Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @Ta=25 Collector Power Dissipation @TC=25 PC TJ Tstg Junction Temperature Storage Temperature isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB994 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.0 V VBE(on) ICBO IEBO Base-Emitter On Voltage IC= -0.5A; VCE= -5V -1.0 V A A Collector Cutoff Current VCB= -60V; IE= 0 VEB= -7V; IC= 0 -100 Emitter Cutoff Current -100 hFE-1 DC Current Gain IC= -0.5A; VCE= -5V hFE-2 DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product Switching Times ton tstg tf Turn-on Time w ww scs .i IC= -3A; VCE= -5V IE= 0; VCB= -10V; ftest= 1MHz IC= -0.5A; VCE= -5V .cn mi e 60 20 200 150 pF 9 MHz 0.4 VCC= -30V, RL= 15, IB1= -IB2= -0.2A, s s s Storage Time 1.7 Fall Time 0.5 hFE-1 Classifications O 60-120 Y 100-200 isc Websitewww.iscsemi.cn 2 |
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