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 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB994
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) *Collector Power Dissipation: PC= 30W@ TC= 25 *Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max)@ IC= -3A *Complement to Type 2SD1354
APPLICATIONS *Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
w
ww
scs .i
VALUE -60 V -60 -7 -3 -0.5 1.5 W 30 150 -55~150 V V A A
UNIT
.cn mi e
Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @Ta=25 Collector Power Dissipation @TC=25
PC
TJ Tstg
Junction Temperature Storage Temperature
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SB994
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -50mA; IB= 0
-60
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -3A; IB= -0.3A
B
-1.0
V
VBE(on) ICBO IEBO
Base-Emitter On Voltage
IC= -0.5A; VCE= -5V
-1.0
V A A
Collector Cutoff Current
VCB= -60V; IE= 0 VEB= -7V; IC= 0
-100
Emitter Cutoff Current
-100
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2
DC Current Gain
COB
Output Capacitance
fT
Current-Gain--Bandwidth Product
Switching Times ton tstg tf
Turn-on Time
w
ww
scs .i
IC= -3A; VCE= -5V
IE= 0; VCB= -10V; ftest= 1MHz
IC= -0.5A; VCE= -5V
.cn mi e
60 20
200
150
pF
9
MHz
0.4 VCC= -30V, RL= 15, IB1= -IB2= -0.2A,
s s s
Storage Time
1.7
Fall Time
0.5
hFE-1 Classifications O 60-120 Y 100-200
isc Websitewww.iscsemi.cn
2


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